QPA1314

13.75–14.5GHz40WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:13.75–14.5GHz •ExtendedFrequencyRange:12.75–15.35GHz •LinearPOUT:43dBm •POUT(PIN=19dBm):46dBm •PAE(PIN=19dBm):30% •IM3(POUT/Tone=40dBm):-25dBc •SmallSignalGain:29dB •Bias:CW,VD=24V,IDQ=680mA,VG=-2.3V

QPA1314D

13.75–14.5GHz55WattGaNPowerAmplifier

ProductOverview Qorvo'sQPA1314DisahighpowerMMICamplifier fabricatedonQorvo'sproduction0.15umGaNonSiC process(QGaN15).QPA1314Distargetedtothe13.75- 14.5GHzSatcomband.Linearpoweris20Wwith25 dBcthirdorderintermodulationdistortionproducts.It provides55Wo

QPA1314DEVB

13.75–14.5GHz55WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:13.75–14.5GHz •ExtendedFrequencyRange:12.75–15.35GHz •PSAT(PIN=25dBm):47.5dBm •PAE(PIN=25dBm):37% •IM3(POUT/Tone=40dBm):-25dBc •SmallSignalGain:29dB •Bias:VD=+24V,ID12=168mA,ID3=512mA, VG=-2.3V+/-rang

QPA1314T

13.75–14.5GHz55WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:13.75–14.5GHz •ExtendedFrequencyRange:12.75–15.35GHz •PSAT(PIN=25dBm):47.5dBm •PAE(PIN=25dBm):37% •IM3(POUT/Tone=40dBm):-25dBc •SmallSignalGain:29dB •Bias:VD=+24V,ID12=168mA,ID3=512mA, VG=-2.3V+/-rang

RBB1314

RatchetRingSpanners

Ratchetingringspannersaredesignedforuseinareas whereaccessisrestricted.Theratchetisreversedsimply byturningthewrenchover.Thebi-hexagonringformis broachedforaccuracytoensureaperfectnonslipfit.The wrenchbodyisnickelandchromeplatedtopreventcorrosion an

RLB1314

Through-HolePowerInductor

RN1314

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN2314~RN2318

RSZ-1314

1WattSMDMiniatureIsolatedSingleOutput

RSZ-1314HP

1WattSMDMiniatureIsolatedSingleOutput

SB1314E-H

ChipLED