RF Transistor

RF Transistor 12V, 30mA, fT=10GHz NPN Single MCPH4 Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=18dB typ (f=1GHz) • Halogen free compliance

文件：301.03 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifi er

NPN Epitaxial Planar Silicon Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=18dB typ (f=1GHz) • Halogen free compliance

文件：84.29 Kbytes 页数：10 Pages

SANYO

三洋

Package：SOT-343F；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 10GHZ 4MCPH

ONSEMI

安森美半导体

COMPLEMENTARY METAL OXIDE SILICON

文件：122.02 Kbytes 页数：1 Pages

NTE

1 Amp Glass Passivated Ultra Fast 1400 to 1600 Volts Recovery Rectifier

Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • Fast Switching Speed For High Efficiency • Glass Passivated Junction

文件：79.2 Kbytes 页数：3 Pages

MCC

1 Amp Glass Passivated Ultra Fast 1400 to 1600 Volts Recovery Rectifier

Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • Fast Switching Speed For High Efficiency • Glass Passivated Junction

文件：79.2 Kbytes 页数：3 Pages

MCC