丝印：MCG；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：805.06 Kbytes 页数：23 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

恩XP

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

文件：474.4 Kbytes 页数：16 Pages

恩XP