MJE340

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Highpowerdissipation APPLICATIONS ·Usefulforhigh-voltagegeneralpurposeapplications ·Suitablefortransformerless,line-operatedequipment

MJE340

PlasticMedium?뭁owerNPNSiliconTransistor

PlasticMedium−PowerNPNSiliconTransistor Thisdeviceisusefulforhigh−voltagegeneralpurposeapplications. Features •SuitableforTransformerless,Line−OperatedEquipment •ThermopadConstructionProvidesHighPowerDissipationRatingforHighReliability •Pb−FreePackageisAvailable

MJE340

SiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) •DCCurrentGain-:hFE=30(Min)@IC=50mA •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@IC=50mA •ComplementtothePNPMJE350 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrel

MJE340

COMPLEMENTARYSILICONPLASTICPOWERTRANSITORS

DESCRIPTION TheCENTRALSEMICONDUCTORMJE340,MJE350typeareComplementarySiliconPowerTransistorsdesignedforpoweroutputstagesinconsumerproductapplications.

MJE340

SiliconPNPPowerTransistors

MJE340

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage- :VCEO(SUS)=300V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=50mA ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=50mA ·ComplementtothePNPMJE350 APPLICATIONS ·Designedforhighvoltage

MJE340

NPNEPITAXIALSILICONPOWERTRANSISTOR

ForuseinHighVoltageGeneralPurposeApplications

MJE340G

PlasticMedium?뭁owerNPNSiliconTransistor

PlasticMedium−PowerNPNSiliconTransistor Thisdeviceisusefulforhigh−voltagegeneralpurposeapplications. Features •SuitableforTransformerless,Line−OperatedEquipment •ThermopadConstructionProvidesHighPowerDissipationRatingforHighReliability •Pb−FreePackageisAvailable

MJE340G

PlasticMedium-PowerNPNSiliconTransistor

MJE340T

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) •DCCurrentGain-:hFE=100(Min)@IC=50mA •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@IC=50mA APPLICATIONS •Designedforhighvoltageandgeneralpurposeapplications.