Power MOSFETS

MCC

美微科

Polar Power MOSFET HiperFET

文件：132.3 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=220A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.22 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET HiperFET

文件：132.3 Kbytes 页数：5 Pages

IXYS

艾赛斯