Power MOSFETS

MCC

美微科

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF

文件：212.96 Kbytes 页数：10 Pages

NEC

瑞萨

N-Channel 40-V (D-S) MOSFET

文件：968.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode

文件：299.24 Kbytes 页数：12 Pages

RENESAS

瑞萨