MZ880

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MZ880

3WATTZENERDIODES

3WATTZENERDIODES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

OD-880

HIGH-POWERGaAlAsIREMITTERS

FEATURES •Veryhighpoweroutput •Wideangleofemission •Highreliabilityliquid-phaseepitaxiallygrownGaAlAs •TO-46Header

OD-880-C

HIGH-POWERGaAlAsIREMITTERCHIPS

FEATURES •HighreliabilityLPEGaAlAsIRLEDchips •Graded-bandgapLEDstructureforhighradiantpoweroutput •880nmpeakemission •Goodohmiccontacts(goldalloys) •Goodbondability

OD-880E

HIGH-POWERGaAlAsIREMITTERS

FEATURES •Highreliabilityliquid-phaseepitaxiallygrownGaAlAs •880nmpeakemission •Highuniformoutput •TO-46Header

OD880F

HIGH-POWERGaAlAsIREMITTERS

OD-880F

HIGH-POWERGaAlAsIREMITTERS

FEATURES •Highreliabilityliquid-phaseepitaxiallygrownGaAlAs •880nmpeakemissionforoptimummatchingwithODD-45Wphotodiode •Widerangeoflinearpoweroutput •HermeticallysealedTO-46package •Narrowangleforlongdistanceapplications •OD-880F1selectedtomeetminimumradia

OD-880F

HIGH-POWERGaAlAsIREMITTERS

OD880FHT

HIGHTEMPERATUREGaAlAsIREMITTERS

OD-880FHT

HIGHTEMPERATUREGaAlAsIREMITTERS

FEATURES •Extendedoperatingtemperaturerange •Nointernalcoatings •Noderatingorheatsinkrequiredto80°C