TZ1723A

CrystalUnitSMD5.0x3.212.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount5.0mmx3.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

UP1723

2A,18V,High-EfficiencySynchronous-RectifiedBuckConverter

UP1723PRUA

2A,18V,High-EfficiencySynchronous-RectifiedBuckConverter

UPA1723

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.

UPA1723

MOSFIELDEFFECTTRANSISTOR

FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP

UPA1723G

MOSFIELDEFFECTTRANSISTOR

FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) •LowCiss:Ciss=3800pFTYP. •Built-inG-Sprotectiondiode •Smallandsurfacemountpackage(PowerSOP

UPA1723G

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES •Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.