ENA1358

N-ChannelandP-ChannelSiliconMOSFETsGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •TheECH8660incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandhigh-speedswitching,therebyenablimghigh-densitymounting. •4Vdrive. •Halogenfreecompliance.

F1358

Zero-DistortionTM,Glitch-FreeTM,DPDReceiver

GENERALDESCRIPTION Thisdocumentdescribesthespecificationforthe IDTF1358DigitalPre-DistortionDemodulatorforPA linearization.Thisseriesofdevicesisoffered FEATURES WideflatperformanceIFBW WideRFandLOBWs(~800MHz) LOcanbeHighorLowSide IdealforMulti

HAH1358

SMTPowerInductor

HM1358

High-endcurrentdetectionswitchinghigh-brightnessLEDdriverIC

IDTF1358NBGI

DPDDemodulatorforPALinearization

K1358

FET,SiliconNChannelMOSType(forHighSpeed,HighCurrentDC-DCConverter,RelayDriveandMotorDiver)

FieldEffectTransistor SiliconNChannelMOSType(π-MOSII.5) HighSpeed,HighCurrentDC-DCConverter, RelayDriveandMotorDriveApplications Features •LowDrain-SourceONResistance -RDS(ON)=1.1Ω(Typ.) •HighForwardTransferAdmittance -Yfs=4.0S(Typ.) •LowLeakage

KS1358N

7mmADJUSTABLEIFTCOILS(I)(SHIELDED)

KS1358N

7mmAdjustableshieldedIFTCoil(I)

KS1358N-LFR

7mmAdjustableshieldedIFTCoil(I)

LT1358

DualandQuad25MHz,600V/usOpAmps