Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

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安森美半导体

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件：105.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：137.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：138.28 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件：105.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

文件：105.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

文件：105.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

双通用晶体管

MBT3904DW1T1、MBT3904DW2T 和 MBT3906DW1T1 器件是我们受欢迎的 SOT-23/SOT-323 三引线器件的副产品。此双 NPN 双极晶体管适用于通用放大器应用，采用 SOT-363 六引线表面贴装封装。通过将两个分立器件放入一个封装中，此类器件适用于板空间非常宝贵的低功率表面贴装应用。 • hFE, 100-300\n• Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• Available in 8 mm, 7-inch/3,000 Unit Tape and Reel\n• Pb Free Packages are Available\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q;

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安森美半导体