Schottky Barrier Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1

文件：152.68 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

文件：134.71 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

文件：255.51 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

文件：138.67 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司