High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

Vishay

威世

High-Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

文件：524.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number

文件：1.96709 Mbytes 页数：4 Pages

KERSEMI

High-Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

文件：524.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

肖特基二极管与整流器 10 Amp 100 Volt 150 Amp IFSM

Vishay

威世

Package：TO-220-2 全封装，隔离接片；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 10A ITO220AC

Vishay General Semiconductor - Diodes Division