SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：987.13 Kbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：738.31 Kbytes 页数：2 Pages

SUNMATE

森美特

Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furth

文件：1.49074 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package

Features  Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current  Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Safe paralleling  Low thermal resistance  Low VF soft recovery co-packaged diode A

文件：871.63 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体