首页 >MBRB2545CTP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualCommon-CathodeSchottkyRectifier FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO- | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SWITCHMODE??SchottkyPowerRectifier SWITCHMODE™SchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DualCommon-CathodeSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
IsolatedplasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 FEATURES ♦IsolatedplasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforward | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE:30-100V CURRENT:30A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltaged | DSK Diode Semiconductor Korea | DSK | ||
DualCommonCathodeSchottkyRectifier | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
IsolatedplasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 FEATURES ♦IsolatedplasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 ♦Dualrectifierconstruction,positivecenter-tap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforward | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
TO-220FPlastic-EncapsulateDiodes SCHOTTKYBARRIERRECTIFIER FEATURES •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInvert | TGS Tiger Electronic Co.,Ltd | TGS | ||
SWITCHMODE??SchottkyPowerRectifier SWITCHMODE™SchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Switch-modeSchottkyPowerRectifier SWITCHMODE™SchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
MBRB2545CTP
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Schottky Rectifier, 2 x 15 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
24+ |
TO-263 |
5000 |
全现原装公司现货 |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
05+ |
TO-263 |
8566 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
24+ |
TO-263 |
8566 |
只做原装进口!正品支持实单! |
询价 | ||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-263 |
12800 |
公司只有原装 欢迎来电咨询。 |
询价 | ||
IR |
23+ |
TO-263 |
11066 |
原厂原装正品 |
询价 | ||
IR |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
询价 |
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