Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

文件：208.52 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

文件：208.52 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

文件：208.52 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

文件：152.24 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司