MBRB10100-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC

MBRB10100-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C •Materialcategorization:Fordefinitionsofcompliance

MBRB10100-M3

High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C •Materialcategorization:fordefinitionsofcompliance plea

MBRB10100-M3

High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier; Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

MBRB10100-M3/4W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 10A TO263AB

Vishay General Semiconductor - Diodes Division

MBRB10100-M3/8W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 10A TO263AB

Vishay General Semiconductor - Diodes Division