Schottky Barrier Rectifier

This Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or r

文件：194.65 Kbytes 页数：6 Pages

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安森美半导体

Schottky Barrier Rectifier

This Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or r

文件：194.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

This Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or r

文件：194.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

This Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or r

文件：194.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

This Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or r

文件：194.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

8A, 170V Schottky Rectifier in μ8-FL

This Schottky rectifier is high performance device in μ8-FL package. The lower forward voltage, less leakage current, and small junction capacitance is suitable for high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or reverse • Lower forward voltage\n• Less conduction loss\n• Lower leakage current in high temperature\n• Preventing thermal runaway\n• Small junction capacitance\n• Less switching loss\n• High avalanche energy capability\n• Better Robustness in abnormal operation\n• Alternative solution on SMA and SMB packag;

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安森美半导体

Package：8-PowerWDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：170V 8A SCHOTTKY

ONSEMI

安森美半导体

Package：8-PowerWDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：170V 8A SCHOTTKY

ONSEMI

安森美半导体

Package：8-PowerWDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：170V 8A SCHOTTKY

ONSEMI

安森美半导体