丝印：MBR1050CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR1050CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：197.32 Kbytes 页数：2 Pages

MOSPEC

统懋

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

文件：64.989 Kbytes 页数：2 Pages

DIODES

美台半导体

10 Am p Schott ky Barrier Rectifier 30-60 Volts

Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Halogen Free Available Upon Request By Adding Suffix -HF • Low Power Loss High Efficiency • High Surge Capacity, High Current Capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Order

文件：647.92 Kbytes 页数：2 Pages

MCC

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guar

文件：145.1 Kbytes 页数：2 Pages

BILIN

银河微电

10Amp schottky barrier rectifier 30-60volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：237.53 Kbytes 页数：2 Pages

CHENYI

商朗电子

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequen

文件：117.06 Kbytes 页数：2 Pages

CTC

沛伦

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10A

Reverse Voltage 40 to 200 V Forward Current 10A Features ·Low Power Loss， High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard

文件：134.84 Kbytes 页数：2 Pages

DACHANG

大昌电子

REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 10.0 Amperes

文件：273.29 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体