丝印：MBR1040CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR1040CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MDDMBR1040CT；Package：TO-220AB；SCHOTTKY BARRIER RECTIFIER

文件：573 Kbytes 页数：2 Pages

CHENDA

辰达半导体

ITO-220AB

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

文件：93.37 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：197.32 Kbytes 页数：2 Pages

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco

文件：141.23 Kbytes 页数：2 Pages

SY

顺烨电子

MBR1040CT SCHOTTKY RECTIFIER

Features  150C TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced  mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  T

文件：297.33 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.47335 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.4945 Mbytes 页数：2 Pages

SAMYANG

三阳电子

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur

文件：99.53 Kbytes 页数：2 Pages

TSC

台湾半导体