丝印：MBR1045；Package：TO-2202L；Schottky Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

文件：462.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：MBR1045CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR1045FCTS；Package：ITO-220AB；Schottky Diodes

FEATURES High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.05323 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR1045；Package：TO-2202L；Schottky Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

文件：462.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 10 A

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：107.53 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

10 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage d

文件：46.36 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification

文件：64.44 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SWITCHMODE™ Power Rectifiers

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha

文件：180.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifiers

Description Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protec

文件：801.1 Kbytes 页数：3 Pages

MULTICOMP

易络盟

10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

文件：56.31 Kbytes 页数：2 Pages

TSC

台湾半导体