丝印：MBQ；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

MICROSEMI

美高森美

丝印：MBQ；Package：SOT25；AUTOMOTIVE, 26V, 400kHz BANDWIDTH UNI-DIRECTIONAL, LOW-SIDE AND HIGH-SIDE CURRENT MONITOR

Features •Supply Voltage Range: 2.7V to 5.5V •Wide Common-Mode Range: -0.3V to 26V •Gain Error: (Maximum over Temperature): ±1% •Choice of Gains: ▪Pinout A1 and B1: 20V/V ▪Pinout A2 and B2: 50V/V ▪Pinout A3 and B3: 100V/V ▪Pinout A4 and B4: 200V/V •Low Offset Voltage: Typical ±100μV a

文件：646.08 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：40T120FDS；Package：TO-247；High speed FieldStop Trench IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  VC

文件：1.27912 Mbytes 页数：8 Pages

MGCHIP

丝印：40T65FDSC；Package：TO-247；650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  V = 1.95V @ I = 40A

文件：1.5971 Mbytes 页数：9 Pages

MGCHIP

丝印：75T65PEH；Package：TO-247；650V Field Stop IGBT

General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. Features  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recove

文件：781.39 Kbytes 页数：8 Pages

MGCHIP

High speed FieldStop Trench IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  VC

文件：1.27912 Mbytes 页数：8 Pages

MGCHIP

650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  V = 1.95V @ I = 40A

文件：1.5971 Mbytes 页数：9 Pages

MGCHIP

650V Field Stop IGBT

General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. Features  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recove

文件：781.39 Kbytes 页数：8 Pages

MGCHIP

High speed Fieldstop Trench IGBT

文件：1.46779 Mbytes 页数：10 Pages

MGCHIP

High speed Fieldstop Trench IGBT

文件：1.46779 Mbytes 页数：10 Pages

MGCHIP