High speed FieldStop Trench IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  VC

文件：1.27912 Mbytes 页数：8 Pages

MGCHIP

丝印：40T120FDS；Package：TO-247；High speed FieldStop Trench IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  VC

文件：1.27912 Mbytes 页数：8 Pages

MGCHIP

High speed FieldStop Trench IGBT

MagnaChip

美格纳

High speed FieldStop Trench IGBT

文件：1.31696 Mbytes 页数：8 Pages

MGCHIP

High speed FieldStop Trench IGBT

文件：1.31696 Mbytes 页数：8 Pages

MGCHIP

1200V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.18686 Mbytes 页数：9 Pages

NCEPOWER

新洁能