MBD770DWT1G分立半导体产品的二极管-射频规格书PDF中文资料

MBD770DWT1G属于分立半导体产品的二极管-射频。由安森美半导体制造生产的MBD770DWT1G二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。

Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The SOT−363 is ideal for low−power surface mount applications where board space is at a premium, such as portable products.

The MBD110DW, MBD330DW, and MBD770DW devices are spin−offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.

特性 Features

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• Pb−Free Packages are Available