256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

文件：2.64873 Mbytes 页数：39 Pages

RAMXEED

富士通

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

文件：2.64873 Mbytes 页数：39 Pages

RAMXEED

富士通

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

文件：2.64873 Mbytes 页数：39 Pages

RAMXEED

富士通

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

文件：2.64873 Mbytes 页数：39 Pages

RAMXEED

富士通

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes 页数：28 Pages

Fujitsu

富士通

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes 页数：28 Pages

Fujitsu

富士通

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes 页数：28 Pages

Fujitsu

富士通

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC FRAM 256KBIT I2C 1MHZ 8SOP

Kaga FEI America, Inc.