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MB84VD2109XEM-70PBS中文资料飞索数据手册PDF规格书
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MB84VD2109XEM-70PBS规格书详情
■ FEATURES
• Power Supply Voltage of 2.7 V to 3.3 V
• High Performance
70 ns maximum access time (Flash)
70 ns maximum access time (SRAM)
• Operating Temperature
–40 °C to +85 °C
• Package 56-ball BGA
● FLASH MEMORY
• Simultaneous Read/Write Operations (Dual Bank)
Miltiple devices available with different bank sizes (Please refer to ORDERING INFORMATION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Minimum 100,000 Write/Erase Cycles
• Sector Erase Architecture
Eight 4 K words and thirty one 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2108XEM: Top sector
MB84VD2109XEM: Bottom sector
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion
• Ready-Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC Write Inhibit ≤ 2.5 V
• HiddenROM Region
64K byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2108XEM:SA37,SA38 MB84VD2109XEM:SA0,SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40.
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL16XTE/BE” Datasheet in Detailed Function
● SRAM
• Power Dissipation
Operating : 40 mA Max
Standby : 7 µA Max
• Power Down Features using CE1s and CE2s
• Data Retention Supply Voltage: 1.5 V to 3.3 V
• CE1s and CE2s Chip Select
• Byte Data Control: LB (DQ7 to DQ0), UB (DQ15 to DQ8)
产品属性
- 型号:
MB84VD2109XEM-70PBS
- 制造商:
SPANSION
- 制造商全称:
SPANSION
- 功能描述:
16M(x8/x16) FLASH MEMORY & 2M(x8/x16) STATIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJITSU |
BGA |
90000 |
公司集团化配单-有更多数量-免费送样-原包装正品现货- |
询价 | |||
HYNIX |
20+ |
BGA |
35200 |
原装现货/放心购买 |
询价 | ||
FUJITSU |
BGA |
42 |
询价 | ||||
FUJITSU |
23+ |
BGA |
10000 |
原装正品现货 |
询价 | ||
FUJITSU |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
FUJITSU |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FUJITSU |
23+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
FUJITSU/富士通 |
23+ |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FUJITSU/富士通 |
23+ |
NA/ |
573 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FUJITSU |
2020+ |
BGA |
350000 |
100%进口原装正品公司现货库存 |
询价 |