PINA780BIDEKR

INA780x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt™Technology

1Features •Lowlossintegratedshuntresistor –Internalresistance:400μΩ,TA=25°C –Continuouscurrent:±75A,TA=25°C –Peakmeasurementcapability:±78.64A •Widecommon-moderange:–0.1Vto+85V •High-resolution,16-bitdelta-sigmaADC •Currentmonitoringaccuracy:A/BGrad

PINA780BIDEKR

INA780x85V,16-Bit,PrecisionI2COutputDigitalPowerMonitorwithEZShunt™Technology

1Features •Lowlossintegratedshuntresistor –Internalresistance:400μΩ,TA=25°C –Continuouscurrent:±75A,TA=25°C –Peakmeasurementcapability:±78.64A •Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±12.5mA/±125mA –Offsetdrift:±50μA/°C(AandB

PMF780SN

N-channeluTrenchMOSstandardlevelFET

PMF780SN

N-Channel60-V(D-S)MOSFET

PMF780SN

N-channelmTrenchMOS™standardlevelFET

1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. 1.2Features 1.3Applications nSurfacemountedpackagenFootprint40smallerthanSOT23 nLowon-stateresistancenFastswitching. nDrivercircuitsnSwitchinginportabl

PMGD780SN

DualN-channel關TrenchMOSstandardlevelFET

PMGD780SN

DualN-channelmTrenchMOSstandardlevelFET

PMGD780SN

DualN-channelμTrenchMOSstandardlevelFET

1.1Generaldescription DualN-channelenhancementmodefield-effecttransistorinasmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOStechnology. 1.2Featuresandbenefits 1.3Applications Surface-mountedpackage Footprint40smallerthanSOT23 Standard

PMR780SN

N-channelUTrenchMOSstandardlevelFET

PMR780SN

N-channelmTrenchMOS™standardlevelFET

1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. 1.2Features 1.3Applications nSurfacemountedpackagenFootprint63smallerthanSOT23 nLowon-stateresistancenFastswitching. nDrivercircuitsnSwitchinginportabl