首页 >MAX521CWG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2WattsHighIn/OutIsolationDIPDC/DCConvertersSingleandDualOutputs | TOTAL-POWER Total Power International | TOTAL-POWER | ||
2W,Ultra-HighIsolationDIP,Single&DualOutputDC/DCConverters | MINMAXMinmax Technology Co., Ltd. 捷拓科技台湾捷拓科技股份有限公司 | MINMAX | ||
SILICONNPNTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SILICONNPNTRANSISTOR DESCRIPTION TheMJE521isasiliconEpitaxial-BaseNPNtransistorinJedecSOT-32plasticpackage. Itisintendedforusein5to20Waudioamplifiers,generalpurposeamplifierandswitchingcircuits. ■STMicroelectronicsPREFERRED SALESTYPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
4AMPEREPOWERTRANSISTORNPNSILICON40VOLTS40WATTS PlasticMedium-PowerNPNSiliconTransistor ...designedforuseingeneral–purposeamplifierandswitchingcircuits.Recommendedforusein5to10Wattaudioamplifiersutilizingcomplementarysymmetrycircuitry. •DCCurrentGain—hFE=40(Min)@IC=1.0Adc •Complementaryto | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PlasticMedium?뭁owerNPNSiliconTransistor Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingcircuits.Recommendedforusein5to10Wattaudioamplifiersutilizingcomplementarysymmetrycircuitry. Features •DCCurrentGain−hFE=40(Min)@IC =1.0Adc •Co | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SILICONCOMPLEMENTRYPOWERTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTORMJE371,MJE521typesareComplementarySiliconPowerTransistorsdesignedforuseingeneralamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector–EmitterSustainingVoltage- :VCEO(SUS)=40V(Min) •DCCurrentGain- :hFE=40(Min)@IC=1A •ComplementtoTypeMJE371 APPLICATIONS •Designedforuseingeneral−purposeamplifierand switchingcircuitsapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PlasticMedium?뭁owerNPNSiliconTransistor Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingcircuits.Recommendedforusein5to10Wattaudioamplifiersutilizingcomplementarysymmetrycircuitry. Features •DCCurrentGain−hFE=40(Min)@IC =1.0Adc •Co | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSiliconEpitaxialPlanarDigitalTransistor NPNSiliconEpitaxialPlanarDigitalTransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC |
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