首页 >MAX4403AUDT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SWITCHINGTRANSISTORSGENERALPURPOSETRANSISTORS??PNPSILICON DESCRIPTION The MBT4403LisavailableinSOT23package FEATURES AvailableinSOT23package | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT4401) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Standa | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable (MMBT4401) IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics | TRSYS | ||
SwitchingTransistorPNPSilicon SwitchingTransistorPNPSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
SmallSignalTransistor(PNP) Features •PNPSiliconEpitaxialPlanarTransistorfor switchingandamplifierapplications. •Ascomplementarytype,theNPNtransistor MMBT4401isrecommended. •ThistransistorisalsoavailableintheTO-92case withthetypedesignation2N4403. | VAISH Vaishali Semiconductor | VAISH | ||
SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.–Gewichtca.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedan | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPGeneralPurposeAmplifier Features •OperatingandStorageJunctionTemperatures:-55°Cto150°C •Capableof350mWattsofPowerDissipation •SurfaceMountSOT-23Package •Ic=-600mA •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabil | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC |
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