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MJ4401

BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage.

SEME-LAB

Seme LAB

MMBT4401

NPNSiliconEpitaxialPlanarTransistor

FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailable:MMBT4403. •Idealformediumpoweramplificationandswitching. APPLICATIONS •Generalpurposeapplication,switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMBT4401

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.–Gewichtca.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedan

DiotecDiotec Semiconductor

德欧泰克

MMBT4401

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

MMBT4401

NPNGENERALPURPOSEAMPLIFIER

DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMBT4401

NPNGeneralPuposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT4401

SwitchingTransistorNPNSilicon

SwitchingTransistorNPNSilicon

WEITRON

Weitron Technology

MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT4403) •IdealforMediumPowerAmplificationandSwitching

TRSYS

Transys Electronics

MMBT4401

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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