TLV2721IDBV

AdvancedLinCMOSERAIL-TO-RAILVERYLOW-POWERSINGLEOPERATIONALAMPLIFIERS

TLV2721IDBV

AdvancedLinCMOSRAIL-TO-RAILVERYLOW-POEWRSINGLEOPERATIONALAMPLIFIERS

TLV2721IDBVR

AdvancedLinCMOSRAIL-TO-RAILVERYLOW-POEWRSINGLEOPERATIONALAMPLIFIERS

TLV2721IDBVT

AdvancedLinCMOSRAIL-TO-RAILVERYLOW-POEWRSINGLEOPERATIONALAMPLIFIERS

TLV2721Y

AdvancedLinCMOSERAIL-TO-RAILVERYLOW-POWERSINGLEOPERATIONALAMPLIFIERS

TLV2721Y

AdvancedLinCMOSRAIL-TO-RAILVERYLOW-POEWRSINGLEOPERATIONALAMPLIFIERS

TZ2721A

CrystalUnitSMD1.6x1.237.4MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ2721B

CrystalUnitSMD1.6x1.237.4MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwireless

UPA2721AGR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2721AGRisN-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofanotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=4.3mΩMAX.(VGS=10V,ID=10A) RDS(on)2=10mΩMAX.(VGS=5.0V,ID=10A) •Lowinputcapacitance C

UPA2721GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2721GRisN-channelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=4.3mΩMAX.(VGS=10V,ID=10A) RDS(on)2=6.3mΩMAX.(VGS=4.5V,