MAX1444EHJSLASHV+

10-Bit, 40Msps, 3.0V, Low-Power ADC with Internal Reference

NCP1444

4.0A280kHz/560kHzBoostRegulators

NCP1444T

4.0A280kHz/560kHzBoostRegulators

NSTS1444

NewJRCSAWFILTER

P1444

CdSphotoconductivecell

CdSphotoconductivecellsutilizephotoconductiveeffectsinsemiconductorsthatdecreasetheirresistancewhenilluminatedbylight.Thesesensorsarenon-polarresistiveelementswithspectralresponsecharacteristicsclosetothehumaneye(luminousefficiency),thusmakingtheiroperatingcirc

RN1444

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

MutingAndSwitchingApplications. ●Highemitter-basevoltage:VEBO=25V(min) ●HighreversehFE:reversehFE=150(typ.)(VCE=−2V,IC=−4mA) ●Lowonresistance:RON=1Ω(typ.)(IB=5mA) ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsand

RN1444

SiliconNPNEpitaxialType(PCTProcess)MutingAndSwitchingApplications

SD1444

RF&MICROWAVETRANSISTORS450-512MHzCLASSCMOBILEAPPLICATIONS

DESCRIPTION: TheSD1444isa12.5VepitaxialsiliconNPNplanartransistordesignedprimarilyforUHFcommunications.ThisdeviceispackagedinagroundedemitterTO-39packageforincreasedpowergainandoptimumheatdissipation. Features ·470MHz ·12.5VOLTS ·POUT=4.0WAT

SD1444

RF&MICROWAVETRANSISTORS450-512MHzCLASSC,MOBILEAPPLICATIONS

RF&MICROWAVETRANSISTORS450-512MHzCLASSCMOBILEAPPLICATIONS

SD1444

SILICONNPNRFPOWERTRANSISTOR

DESCRIPTION: TheASISD1444isdesignedforlargesignalpoweramplifierapplicationsoperatinginthe250-512MHzrange. FEATURES: •CommonEmitter •POUT=4.0Watts •12.5Volts