Package：16-TSSOP（0.173"，4.40mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 转换器，电平移位器 描述：IC TRNSLTR BIDIRECTIONAL 16TSSOP

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亚德诺

Package：16-TSSOP（0.173"，4.40mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 转换器，电平移位器 描述：IC TRNSLTR BIDIRECTIONAL 16TSSOP

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亚德诺

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

文件：49.87 Kbytes 页数：7 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

文件：49.87 Kbytes 页数：7 Pages

PHI

PHI

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：236.1 Kbytes 页数：7 Pages

STMICROELECTRONICS

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