8-Bit, 2.2Gsps ADC with Track/Hold Amplifier and 1:4 Demultiplexed LVDS Outputs

文件：457.64 Kbytes 页数：29 Pages

MAXIM

美信

Germanium Diode Fast Switching General Purpose

Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.

文件：18.86 Kbytes 页数：1 Pages

NTE

Silicon NPN Phototransistor

文件：47.06 Kbytes 页数：2 Pages

PANASONIC

松下

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

统懋