GaN Wideband Transistor 28 V, 4 W

文件：1.32636 Mbytes 页数：10 Pages

MA-COM

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

MA-COM

GaN Amplifier 28 V, 4 W, DC - 6 GHz

The MAGx-011086 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation in a user friendly package ideal for high bandwidth applications. This device has been designed for CW, pulsed, and linear operation with output power levels of 5W (37 dBm) in an industry standard, low inductance, sur ·Broadband operation from DC-6 GHz\n·Industry Standard Plastic Package\n·28V Operation\n·High Drain Efficiency (>60%);

MACOM

Package：24-VFQFN 裸露焊盘；包装：带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 0HZ-6GHZ 24QFN

MACOM Technology Solutions

GaN Wideband Transistor 28 V, 4 W

文件：1.32636 Mbytes 页数：10 Pages

MA-COM

GaN Wideband Transistor 28 V, 4 W

文件：1.32636 Mbytes 页数：10 Pages

MA-COM

GaN Wideband Transistor 28 V

文件：972.92 Kbytes 页数：4 Pages

MA-COM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR MAGX-011086A

MACOM Technology Solutions

Package：24-VFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：AMPLIFIER,GAN,DC-6GHZ,28V,4W,HEM

MACOM Technology Solutions