MA4BPS301中文资料MACOM数据手册PDF规格书

描述 Description

These silicon - glass PIN diode chips are fabricated with M/A-COM’s patented HMIC™ process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads allow use of multiple bond wires. The location of these pads on a glass substrate results in low parasitic capacitance. The diode junction is passivated with silicon nitride and a layer of polyimide has been added for scratch protection during assembly. The devices are available on industry standard tape frame for automatic insertion and assembly in high volume applications.

特性 Features

• Bond Pads Removed From Active Junction

• Large Bond Pads Support Multiple Bond Wires

• Rugged Silicon-Glass Construction

• Silicon Nitride Passivation

• Polyimide Scratch Protection