MA4AGSW8-1RF/IF射频/中频RFID的射频开关规格书PDF中文资料

DESCRIPTION

M/A-COM’s MA4AGSW8-1 is an Aluminum-Gallium-Arsenide, single pole, eight throw (SP8T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required.

FEATURES

♦ Ultra Broad Bandwidth: 50 MHz to 40 GHz

♦ Functional Bandwidth : 50 MHz to 50 GHz

♦ Low Current consumption.

• -10mA for low loss state

• +10mA for Isolation state

♦ M/A-COM’s unique AlGaAs hetero-junction

anode technology.

♦ Silicon Nitride Passivation

♦ Polymer Scratch protection