MA4AGSW2RF/IF射频/中频RFID的射频开关规格书PDF中文资料

DESCRIPTION

The MA4AGSW2 is an Aluminum-Gallium-Arsenide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Tech’s patented heterojunction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required.

FEATURES

• Ultra Broad Bandwidth : 50 MHz to 50 GHz

• Functional Bandwidth : 50 MHz to 70 GHz

• 0.7 dB Insertion Loss

• 33 dB Isolation at 50 GHz

• Low Current consumption

• -10mA for low loss state

• +10mA for Isolation state

• M/A-COM Tech’s unique AlGaAs

hetero-junction anode technology

• Silicon Nitride Passivation

• Polymer Scratch protection

• RoHS Compliant* and 260°C Reflow Compatible

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes makes this switch

ideal for fast switching, high frequency, multi-throw

switch designs. These AlGaAs PIN switches are use

in switching arrays for radar systems, radiometers,

test equipment and other multi-assembly components.