MA4AGSW1ARF/IF射频/中频RFID的射频开关规格书PDF中文资料

DESCRIPTION

M/A-COM’s MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD eptaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit lower series resistance, lower capacitance, and faster switching speeds than Silicon based devices. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows for maximum design flexibility.

FEATURES

• Ultra Broad Bandwidth: 10 GHz to 50 GHz

• Functional Bandwidth: 100 MHz to 70 GHz

• 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz

• M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology.

• Silicon Nitride Passivation

• Polymide Scratch protection