MA4AGSW8-1RF/IF射频/中频RFID的射频开关规格书PDF中文资料

描述 Description

M/A-COM’s MA4AGSW8-1 is an Aluminum-Gallium- Arsenide (AlGaAs) anode enhanced, SP8T PIN diode Series Switch. Operation is accomplished with 10 mA applied to the low loss port and 0 V for the isolated ports.

M/A-COM’s AlGaAs process utilizes a patent pending hetero-junction technology which produces lower insertion loss than conventional GaAs devices. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit low series resistance, ( 3 Ω ) , low capacitance ( 20 fF ) , and fast switching speed ( 20 nS ).

The MA4AGSW8-1 device is fully passivated with silicon nitride, and has an additional layer of a polyamide for impact protection. This protective coating prevents damage to the junction and the anode air bridges during assembly and test. RF to DC bias networks are required. This allows the MA4AGSW8-1 device to be optimized for a particular operating band.

特性 Features

■ Specified Performance : 50 MHz to 40 GHz

■ Operational performance: 50 MHz to 50 GHz

■ 2.0 dB Typical Insertion Loss at 40 GHz

■ 30 dB Typical Isolation at 40 GHz thru 3 Diodes

■ 22 dB Typical Isolation at 40 GHz thru 2 Diodes

■ Low Current comsumption :

10 mA for low loss state

0 Volts for Isolation state

■ M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology

■ Silicon Nitride Passivation

■ BCB Impact Protection