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M74HCT10

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM74HCT10isanhighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenableshighnoiseimmunityandstableoutput. TheM74HCT10isdesignedtodirectlyinterfaceHSC2MO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM54/74HCT10isahighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology.IthasthesamehighspeedperformanceofLSTTLcombinedwithtrueCMOSlowpowerconsumption.Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10B1R

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM74HCT10isanhighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenableshighnoiseimmunityandstableoutput. TheM74HCT10isdesignedtodirectlyinterfaceHSC2MO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10B1R

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM54/74HCT10isahighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology.IthasthesamehighspeedperformanceofLSTTLcombinedwithtrueCMOSlowpowerconsumption.Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10C1R

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM54/74HCT10isahighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology.IthasthesamehighspeedperformanceofLSTTLcombinedwithtrueCMOSlowpowerconsumption.Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10M1R

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM74HCT10isanhighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenableshighnoiseimmunityandstableoutput. TheM74HCT10isdesignedtodirectlyinterfaceHSC2MO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10M1R

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM54/74HCT10isahighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology.IthasthesamehighspeedperformanceofLSTTLcombinedwithtrueCMOSlowpowerconsumption.Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10RM13TR

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM74HCT10isanhighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenableshighnoiseimmunityandstableoutput. TheM74HCT10isdesignedtodirectlyinterfaceHSC2MO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M74HCT10TTR

TRIPLE 3-INPUT NAND GATE

DESCRIPTION TheM74HCT10isanhighspeedCMOSTRIPLE3-INPUTNANDGATEfabricatedwithsilicongateC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichenableshighnoiseimmunityandstableoutput. TheM74HCT10isdesignedtodirectlyinterfaceHSC2MO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    M74HCT10

  • 功能描述:

    逻辑门 DIP-14 TRPL 3IN NAND

  • RoHS:

  • 制造商:

    Texas Instruments

  • 产品:

    OR

  • 逻辑系列:

    LVC

  • 栅极数量:

    2

  • 线路数量(输入/输出):

    2/1

  • 高电平输出电流:

    - 16 mA

  • 低电平输出电流:

    16 mA

  • 传播延迟时间:

    3.8 ns

  • 电源电压-最大:

    5.5 V

  • 电源电压-最小:

    1.65 V

  • 最大工作温度:

    + 125 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    DCU-8

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
24+
3000
公司现货
询价
ST
05+
原厂原装
4956
只做全新原装真实现货供应
询价
ST
24+/25+
21
原装正品现货库存价优
询价
ST
20+
2107
全新现货热卖中欢迎查询
询价
ST/意法
23+
DIP
50000
全新原装正品现货,支持订货
询价
ST
25+
QFP
3200
全新原装、诚信经营、公司现货销售!
询价
ST/意法
23+
SOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
23+
SOP
16900
正规渠道,只有原装!
询价
ST
23+
3880
正品原装货价格低
询价
更多M74HCT10供应商 更新时间2025-7-23 15:46:00