丝印：M74；Package：SOT143B；MOSFET N-channel enhancement switching transistor

DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-t

文件：328.19 Kbytes 页数：6 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：M74HC04B1；Package：DIP14；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：M74202Q；Package：HTSSOP；LM74202-Q1 40-V, 2.2-A Integrated Ideal Diode with Overvoltage and Overcurrent Protection

文件：2.17404 Mbytes 页数：40 Pages

TI

德州仪器

丝印：M747；Package：SOT-23；LM74700-Q1 Low IQ Reverse Battery Protection Ideal Diode Controller

文件：3.1966 Mbytes 页数：36 Pages

TI

德州仪器

丝印：M747；Package：SOT-23；LM74700-Q1 Low IQ Reverse Battery Protection Ideal Diode Controller

文件：3.1966 Mbytes 页数：36 Pages

TI

德州仪器

丝印：M74HC04B1；Package：DIP14；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：74HC04；Package：SO14；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：HC04；Package：TSSOP14；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：74HC04Y；Package：SO14(automotivegrade)；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：HC04Y；Package：TSSOP14(automotivegrade)；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体