M6MGB331S8AKT中文资料瑞萨数据手册PDF规格书

Description

The M6MGB/T331S8AKT is a Stacked micro Multi Chip Package (S- mMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP for lead free use.

32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, , single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can not be programmed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation can be executed.

8M-bit SRAM is a 1,048,576 bytes / 524,288 words asynchronous SRAM fabricated by CMOS technology for the peripheral circuit .

The M6MGB/T331S8AKT is suitable for a high performance cellular phone and a mobile PC that are required to be small mounting area, weight and small power dissipation

Features

Access Time Flash 70ns (Max.)

SRAM 85ns (Max.)

Supply Voltage VCC=2.7 ~ 3.0V

Ambient Temperature Ta=-40 ~ 85 °C

Package 52pin TSOP(Type-II),

Lead pitch 0.4mm

Outer-lead finishing:Sn-Cu

Application

Mobile communication products