M6MGB166S4BWG中文资料三菱电机数据手册PDF规格书

DESCRIPTION

The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP.

16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.

4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.

M6MGB/T166S4BWG is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

FEATURES

• Access time

Flash Memory 90ns (Max.)

SRAM 85ns (Max.)

• Supply voltage Vcc=2.7 ~ 3.6V

• Ambient temperature

W version Ta=-20 ~ 85°C

• Package : 72-pin S-CSP , 0.8mm ball pitch

APPLICATION

Mobile communication products