M6MGB160S4BVP中文资料三菱电机数据手册PDF规格书

DESCRIPTION

The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).

16M-bits Flash memory is a 2097152 bytes /1048576 words 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.

4M-bits SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.

M6MGB/T160S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

FEATURES

• Access time

Flash Memory 90ns (Max.)

SRAM 85ns (Max.)

• Supply voltage Vcc=2.7 ~ 3.6V

• Ambient temperature

W version Ta=-20 ~ 85°C

• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION

Mobile communication products