128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体

128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it c

文件：932.36 Kbytes 页数：65 Pages

STMICROELECTRONICS

意法半导体