32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

文件：396.89 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

文件：396.89 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

文件：396.89 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

文件：396.89 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体