M58MR016DZC规格书原装现货意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M58MR016DZC	文件：389.53 Kbytes Page：51 Pages	16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory DESCRIPTION The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. 文件：389.53 Kbytes 页数：51 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58MR016-ZCT	文件：389.53 Kbytes Page：51 Pages	16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory DESCRIPTION The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. 文件：389.53 Kbytes 页数：51 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58MR016C	文件：389.53 Kbytes Page：51 Pages	16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory DESCRIPTION The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. 文件：389.53 Kbytes 页数：51 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58MR016CZC	文件：389.53 Kbytes Page：51 Pages	16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory DESCRIPTION The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. 文件：389.53 Kbytes 页数：51 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58MR016D	文件：389.53 Kbytes Page：51 Pages	16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory DESCRIPTION The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. 文件：389.53 Kbytes 页数：51 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M58MR016DZC
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M58MR032C100ZC6		24+		3000	公司存货	询价
深圳市佳鑫美电子科技有限公司	M58MR032C100ZC6	ST	25+	BGA	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
艾睿（深圳）半导体有限公司	M58MR032C100ZC6	ST	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市恒达亿科技有限公司	M58MR032C100ZC6	ST	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
贸泽芯城（深圳）电子科技有限公司	M58MR032C100ZC6	ST/意法	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市赛美科科技有限公司	M58MR032C100ZC6	ST		ROHS	13352	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市腾亿芯科技有限公司	M58MR032C120GC6	ST	25+	FBGA	16900	原装，请咨询	询价
深圳市盈慧通电子有限公司	M58MR032C120GC6	ST	2511	FBGA	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市中飞凌科技有限公司	M58MR032C120GC6	ST	26+	FBGA	60000	只有原装可配单	询价
深圳市勤思达科技有限公司	M58NR064	ST	10+	FBGA	7800	全新原装正品,现货销售	询价

更多M58MR016DZC供应商更新时间2026-1-30 16:01:00

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