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型号	下载订购	功能描述	制造商上传企业	LOGO
M58LW064A	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150NF1T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150NF6T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150NH1T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150NH6T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150T1T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150T6T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150ZA1T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064A150ZA6T	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58LW064ANF	文件：319.16 Kbytes Page：53 Pages	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise 文件：319.16 Kbytes 页数：53 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M58LW064A
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	M58LW064A	ST	25+	ST	90	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	M58LW064A-90N1	SST	24+	TSOP	486		询价
深圳市弘为电子有限公司	M58LW064A-90N1	ST	24+	TSOP	6000	原装现货假一罚十	询价
深圳市澳亿芯电子科技有限公司	M58LW064A-90N1	原厂	25+	IC	1	普通	询价
深圳市恒达亿科技有限公司	M58LW064A-90N1	SST	25+	TSOP	4500	全新原装、诚信经营、公司现货销售!	询价
贸泽芯城（深圳）电子科技有限公司	M58LW064A-90N1	ST/意法	23+	TSSOP	8000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市赛美科科技有限公司	M58LW064A-90N1	ST		TSSOP	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市旺财半导体有限公司	M58LW064A-90N1	SST	23+	TSOP	4000	正品原装货价格低	询价
深圳市宏世佳电子科技有限公司	M58LW064A-150N1ES	ST	2025+	TSOP56	3750	全新原厂原装产品、公司现货销售	询价
深圳市柯尔基电子有限公司	M58LW064A-90N1	ST	23+24	TSSOP	29650	原装正品优势渠道价格合理.可开13%增值税发票	询价

更多M58LW064A供应商更新时间2026-1-29 15:42:00

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