32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件：435.62 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

ST

意法半导体