16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

文件：895.86 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally

文件：895.86 Kbytes 页数：63 Pages

STMICROELECTRONICS

意法半导体

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

文件：1.35281 Mbytes 页数：70 Pages

NUMONYX

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp

文件：627.94 Kbytes 页数：69 Pages

STMICROELECTRONICS

意法半导体